Forward-seeking: Samsung is effectively on its way to quantity generating D1a-based mostly DDR5 and LPDDR5 memory based mostly on extreme ultraviolet (EUV) technology in 2021. As a demonstration of its specialized prowess, the South Korean electronics giant has previously correctly delivered a person million EUV-based mostly 10nm-course (D1x) DDR4 DRAM modules which have furthermore handed world-wide buyer evaluations.
Samsung mentioned EUV technology reduces repetitive steps in multi-patterning and increases patterning accuracy which potential customers to improved functionality and greater yields as effectively as abbreviated development time. In accordance to the firm, it is the first to undertake EUV in DRAM generation to overcome DRAM scaling issues.
Jung-bae Lee, govt vice president of DRAM solution and technology at Samsung Electronics, mentioned the advancement underscores how Samsung will keep on contributing to world-wide IT innovation by well timed development of top-edge procedure technologies and future-generation memory goods for the quality memory market.
“With the generation of our new EUV-based mostly DRAM, we are demonstrating our complete dedication toward offering groundbreaking DRAM solutions in assistance of our world-wide IT shoppers,” the govt additional.
Samsung last thirty day period announced that its V1 semiconductor fabrication line, the first committed to EUV lithography, had begun mass generation. That facility is employed to deliver 6nm and 7nm chips with the capability to ultimately go all the way down to 3nm. By the finish of 2020, Samsung will have pumped $6 billion into the manufacturing facility.
The chipmaker mentioned it programs to fire up a second semiconductor fabrication line in Pyeongtaek, South Korea, afterwards this calendar year to assist tackle the expanding desire for future-gen quality DRAM.